SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung M471A1G44AB0-CWE 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 50

左右 14% 更低的延时

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 12.3

测试中的平均数值
更快的写入速度，GB/s

10.9 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M471A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 50
读取速度，GB/s

12.3 15.3
写入速度，GB/s

8.1 10.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1706 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

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Mushkin 996902 2GB

Mushkin 996902 2GB

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A-DATA Technology DDR2 800G 2GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB