SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung SF4641G8CKHI6DFSDS 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Samsung SF4641G8CKHI6DFSDS 8GB

需要考虑的原因
Samsung SF4641G8CKHI6DFSDS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

15.3 12.3

测试中的平均数值
更快的写入速度，GB/s

11.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung SF4641G8CKHI6DFSDS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

12.3 15.3
写入速度，GB/s

8.1 11.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 2648

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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Asgard VMA41UG-MEC1U2AW1 8GB

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G Skill Intl F4-3600C16-8GVKC 8GB

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Kingston 99U5471-030.A00LF 8GB

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Kingston 9905702-008.A00G 8GB

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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Corsair CMW32GX4M4C3466C16 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT8G4SFRA266.M8FRS 8GB

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Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB