SK Hynix HMT351R7EFR8C-RD 4GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

15.6 9.8

测试中的平均数值
更快的写入速度，GB/s

11.6 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

9.8 15.6
写入速度，GB/s

7.2 11.6
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2065 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

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Kingston 9905471-006.A01LF 4GB

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Samsung M471A1G44AB0-CWE 8GB

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Kingston HX426C16FB2/8-SP 8GB

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Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Team Group Inc. TEAMGROUP-UD4-4000 4GB

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