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SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB

SK Hynix HMT351R7EFR8C-RD 4GB vs G Skill Intl F4-3200C14-16GTZDCB 16GB

总分
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

差异 规格 评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
G Skill Intl F4-3200C14-16GTZDCB 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZDCB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 21
  • 读取速度，GB/s
    9.8 left arrow 19.5
  • 写入速度，GB/s
    7.2 left arrow 13.5
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 3512

SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

G Skill Intl F4-3200C14-16GTZDCB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9905701-143.A00G 16GB
Kingston 9905701-143.A00G 16GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Kingston 9965525-058.A00LF 8GB
Kingston 9965525-058.A00LF 8GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905700-097.A00G 8GB
Kingston 9905700-097.A00G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
V-Color Technology Inc. TL48G24S815RGB 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1A2400C14 8GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM