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SK Hynix HMT351R7EFR8C-RD 4GB
Kingston HX432C15PB3/16G 16GB

SK Hynix HMT351R7EFR8C-RD 4GB vs Kingston HX432C15PB3/16G 16GB

总分
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分
star star star star star
Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

差异 规格 评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
Kingston HX432C15PB3/16G 16GB 需要考虑的原因
Kingston HX432C15PB3/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 37
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 14900
    左右 1.72 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston HX432C15PB3/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 36
  • 读取速度，GB/s
    9.8 left arrow 15.8
  • 写入速度，GB/s
    7.2 left arrow 10.6
  • 内存带宽，mbps
    14900 left arrow 25600
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-25600, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 2736

SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

Kingston HX432C15PB3/16G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
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内存RAM
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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
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内存RAM
Kingston 9965525-155.A00LF 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
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Panram International Corporation M424016 4GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C14-32GVK 32GB
G Skill Intl F4-3200C14-32GVK 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
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内存RAM
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内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM