SK Hynix HMT351S6CFR8C-PB 4GB vs Crucial Technology BL8G32C16U4B.8FE 8GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Crucial Technology BL8G32C16U4B.8FE 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

Crucial Technology BL8G32C16U4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的读取速度，GB/s

19.1 11.6

测试中的平均数值
更快的写入速度，GB/s

14.4 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology BL8G32C16U4B.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

11.6 19.1
写入速度，GB/s

8.0 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1854 3363

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-4400C19-8GTZKK 8GB

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Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB