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SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB

SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 16ATF2G64HZ-2G3B2 16GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
Micron Technology 16ATF2G64HZ-2G3B2 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 46
    左右 -92% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 24
  • 读取速度，GB/s
    11.6 left arrow 16.6
  • 写入速度，GB/s
    8.0 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2969

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9965640-006.A01G 32GB
Kingston 9965640-006.A01G 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMH32GX4M4D3600C18 8GB
Corsair CMH32GX4M4D3600C18 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMR32GX4M4C3600C18 8GB
Corsair CMR32GX4M4C3600C18 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM