SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 18ASF1G72PZ-2G1AV 8GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

46 60

左右 23% 更低的延时
更快的读取速度，GB/s

11.6 6.4

测试中的平均数值
更快的写入速度，GB/s

8.0 4.2

测试中的平均数值

Micron Technology 18ASF1G72PZ-2G1AV 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1AV 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 60
读取速度，GB/s

11.6 6.4
写入速度，GB/s

8.0 4.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1854 1400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351S6CFR8C-PB 4GB

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Kingston 9905584-016.A00LF 4GB

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Samsung M393B1K70QB0-CK0 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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