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SK Hynix HMT351S6CFR8C-PB 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB

SK Hynix HMT351S6CFR8C-PB 4GB vs Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
Nanya Technology NT4GC64B8HG0NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 46
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    13 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.0
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    46 left arrow 45
  • 读取速度，GB/s
    11.6 left arrow 13.0
  • 写入速度，GB/s
    8.0 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2079

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM的比较

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905474-019.A00LF 2GB
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内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM