SK Hynix HMT351S6EFR8A-PB 4GB vs Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

总分

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

差异规格评论

差异

SK Hynix HMT351S6EFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT351S6EFR8A-PB 4GB

报告一个错误

更快的写入速度，GB/s

9.3 9.0

测试中的平均数值

Nanya Technology NT4GC64B8HG0NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 46

左右 -2% 更低的延时
更快的读取速度，GB/s

13 12.5

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT351S6EFR8A-PB 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

46 45
读取速度，GB/s

12.5 13.0
写入速度，GB/s

9.3 9.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2048 2079

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT351S6EFR8A-PB 4GB

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Nanya Technology NT4GC64B8HG0NS-DI 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston KY7N41-MID 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CMK16GX4M2Z4000C18 8GB

Corsair CMK16GX4M2Z4000C18 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Kingston LV32D4U2S8HD-8X 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB