SK Hynix HMT351S6EFR8A-PB 4GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

差异规格评论

差异

SK Hynix HMT351S6EFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT351S6EFR8A-PB 4GB

报告一个错误

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 46

左右 -21% 更低的延时
更快的读取速度，GB/s

14.2 12.5

测试中的平均数值
更快的写入速度，GB/s

9.8 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6EFR8A-PB 4GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 38
读取速度，GB/s

12.5 14.2
写入速度，GB/s

9.3 9.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2048 2451

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M378A1G44BB0-CWE 8GB