SK Hynix HMT351U6CFR8C-H9 4GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

18 13.7

测试中的平均数值
更快的写入速度，GB/s

14.3 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

13.7 18.0
写入速度，GB/s

8.3 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2152 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMK256GX4M8A2400C16 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-2800C15-4GTZ 4GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Kingston 9905713-004.A00G 4GB

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Kingston 99U5469-045.A00LF 4GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

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Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMV4GX3M1B1600C11 4GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB