SK Hynix HMT351U6CFR8C-H9 4GB vs Crucial Technology CT8G4DFS8266.M8FH 8GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

Crucial Technology CT8G4DFS8266.M8FH 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FH 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

16.3 13.7

测试中的平均数值
更快的写入速度，GB/s

12.2 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

13.7 16.3
写入速度，GB/s

8.3 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2152 2893

RAM Latency Calculator

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RAM 2

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Panram International Corporation PUD42133C138G4NJK 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A5244CB0-CRC 4GB

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