SK Hynix HMT351U6CFR8C-H9 4GB vs Samsung M393A2K43DB3-CWE 16GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 53

左右 21% 更低的延时
更快的读取速度，GB/s

13.7 10.3

测试中的平均数值
更快的写入速度，GB/s

8.3 7.7

测试中的平均数值

Samsung M393A2K43DB3-CWE 16GB

需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Samsung M393A2K43DB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 53
读取速度，GB/s

13.7 10.3
写入速度，GB/s

8.3 7.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2152 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Avant Technology J642GU42J9266NF 16GB

Avant Technology J642GU42J9266NF 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMD32GX4M2B2800C14 16GB

Corsair CMD32GX4M2B2800C14 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston MSI24D4S7S8MB-8 8GB

Kingston MSI24D4S7S8MB-8 8GB