SK Hynix HMT351U6CFR8C-H9 4GB vs Samsung M474A2K43BB1-CPB 16GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

Samsung M474A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M474A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的读取速度，GB/s

14.3 13.7

测试中的平均数值
更快的写入速度，GB/s

8.6 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Samsung M474A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 28
读取速度，GB/s

13.7 14.3
写入速度，GB/s

8.3 8.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M474A2K43BB1-CPB 16GB

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Kingston 9905403-447.A00LF 4GB

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Corsair CMSX16GX4M2A3000C18 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

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Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB