SK Hynix HMT41GS6AFR8A-PB 8GB vs G Skill Intl F4-3333C16-4GRKD 4GB

总分

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

差异规格评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB

报告一个错误

G Skill Intl F4-3333C16-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3333C16-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 48

左右 -71% 更低的延时
更快的读取速度，GB/s

12.9 11.6

测试中的平均数值
更快的写入速度，GB/s

10.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6AFR8A-PB 8GB

G Skill Intl F4-3333C16-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 28
读取速度，GB/s

11.6 12.9
写入速度，GB/s

7.8 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2029 2619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-ED4-2400 16GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CM4X8GE2666C16K4 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99U5474-028.A00LF 4GB

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Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

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Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB