Samsung M378B5773DH0-CH9 2GB vs AMD R748G2606U2S 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 61

左右 36% 更低的延时

AMD R748G2606U2S 8GB

需要考虑的原因
AMD R748G2606U2S 8GB

报告一个错误

更快的读取速度，GB/s

15 11.7

测试中的平均数值
更快的写入速度，GB/s

8.9 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

AMD R748G2606U2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 61
读取速度，GB/s

11.7 15.0
写入速度，GB/s

7.2 8.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2028

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Team Group Inc. Team-Elite-2400 4GB

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Kingston ACR16D3LS1KNG/8G 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB

Kingston 99U5474-028.A00LF 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

AMD AE34G2139U2 4GB

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Corsair CM4X8GF2133C15S2 8GB