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SK Hynix HMT41GU7BFR8A-PB 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB vs InnoDisk Corporation M4U0-8GSSKCSJ 8GB

总分
star star star star star
SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

总分
star star star star star
InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

差异 规格 评论

差异

SK Hynix HMT41GU7BFR8A-PB 8GB 需要考虑的原因
SK Hynix HMT41GU7BFR8A-PB 8GB
报告一个错误
InnoDisk Corporation M4U0-8GSSKCSJ 8GB 需要考虑的原因
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 41
    左右 -28% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT41GU7BFR8A-PB 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 32
  • 读取速度，GB/s
    13.7 left arrow 16.0
  • 写入速度，GB/s
    9.3 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2290 left arrow 2714

SK Hynix HMT41GU7BFR8A-PB 8GB RAM的比较

SK Hynix HMT41GU7BFR8C-RD 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMD128GX4M8B3200C16 16GB
Corsair CMD128GX4M8B3200C16 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston MSI26D4S9S8HJ-8 8GB
Kingston MSI26D4S9S8HJ-8 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA82GR7AFR8N-UH 16GB
SK Hynix HMA82GR7AFR8N-UH 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Essencore Limited KD4AGU88C-26N190A 16GB
Essencore Limited KD4AGU88C-26N190A 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM