SK Hynix HMT41GU7BFR8A-PB 8GB vs Kingston 9965662-012.A01G 16GB

总分

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

总分

Kingston 9965662-012.A01G 16GB

Kingston 9965662-012.A01G 16GB

差异规格评论

差异

SK Hynix HMT41GU7BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GU7BFR8A-PB 8GB

报告一个错误

更快的读取速度，GB/s

13.7 11.9

测试中的平均数值
更快的写入速度，GB/s

9.3 8.3

测试中的平均数值

Kingston 9965662-012.A01G 16GB

需要考虑的原因
Kingston 9965662-012.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7BFR8A-PB 8GB

Kingston 9965662-012.A01G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

13.7 11.9
写入速度，GB/s

9.3 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2290 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863QZS-CF7 1GB

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Golden Empire CL5-5-5DDR2 1GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Samsung 1600 CL10 Series 8GB

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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3200C16-16GTZA 16GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB