SK Hynix HMT41GU7BFR8A-PB 8GB vs Mushkin 99[2/7/4]200[F/T] 8GB

总分

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

总分

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

差异规格评论

差异

SK Hynix HMT41GU7BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GU7BFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时
更快的读取速度，GB/s

13.7 10.5

测试中的平均数值
更快的写入速度，GB/s

9.3 8.0

测试中的平均数值

Mushkin 99[2/7/4]200[F/T] 8GB

需要考虑的原因
Mushkin 99[2/7/4]200[F/T] 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7BFR8A-PB 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 46
读取速度，GB/s

13.7 10.5
写入速度，GB/s

9.3 8.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2290 2368

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Mushkin 99[2/7/4]200[F/T] 8GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M323R2GA3BB0-CQKOD 16GB

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4SFS832A.C8FE 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CM4X16GE2666C16K4 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Kingston 99U5428-063.A00LF 8GB

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Kingston 9905624-013.A00G 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB