SK Hynix HMT41GU7BFR8C-RD 8GB vs Crucial Technology CT8G4DFRA266.C8FN 8GB

总分

SK Hynix HMT41GU7BFR8C-RD 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

总分

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

差异规格评论

差异

SK Hynix HMT41GU7BFR8C-RD 8GB

需要考虑的原因
SK Hynix HMT41GU7BFR8C-RD 8GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

15.5 15.1

测试中的平均数值
更快的写入速度，GB/s

12.4 9.9

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7BFR8C-RD 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

15.1 15.5
写入速度，GB/s

9.9 12.4
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston 9905599-026.A00G 8GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMK16GX4M4B3866C18 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB