SK Hynix HMT425S6AFR6A-PB 2GB vs Crucial Technology BL32G32C16U4B.M16FB1 32GB

总分

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

总分

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

差异规格评论

差异

SK Hynix HMT425S6AFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Crucial Technology BL32G32C16U4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16U4B.M16FB1 32GB

报告一个错误

更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

15.2 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6AFR6A-PB 2GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.6 17.0
写入速度，GB/s

8.2 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1822 3562

RAM Latency Calculator

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最新比较

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Kingston HX316C10F/8 8GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

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Kingston 9965525-018.A00LF 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600