SK Hynix HMT425S6AFR6A-PB 2GB vs Samsung M471B5173DB0-YK0 4GB

总分

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

差异规格评论

差异

SK Hynix HMT425S6AFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 38% 更低的延时
更快的读取速度，GB/s

12.6 12

测试中的平均数值
更快的写入速度，GB/s

8.2 7.8

测试中的平均数值

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

规格

完整的技术规格清单

SK Hynix HMT425S6AFR6A-PB 2GB

Samsung M471B5173DB0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 45
读取速度，GB/s

12.6 12.0
写入速度，GB/s

8.2 7.8
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1822 1939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GRS 8GB

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Good Wealth Technology Ltd. 8GB

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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

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Crucial Technology CT8G4SFRA266.C8FD1 8GB

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Essencore Limited KD48GU880-26N160T 8GB

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Kingston KHX318C10FR/8G 8GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston K9CXF2-MIE 8GB

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Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMK16GX4M2D3200C16 8GB

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Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB