SK Hynix HMT425S6CFR6A-PB 2GB vs Corsair CMT64GX4M4K3600C18 16GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Corsair CMT64GX4M4K3600C18 16GB

需要考虑的原因
Corsair CMT64GX4M4K3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

16.5 10.1

测试中的平均数值
更快的写入速度，GB/s

13.8 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMT64GX4M4K3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

10.1 16.5
写入速度，GB/s

7.1 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1484 3447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT25664BA160B.C8FK 2GB

Crucial Technology CT25664BA160B.C8FK 2GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905678-156.A00G 8GB

Kingston 9905678-156.A00G 8GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB