SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology BL8G32C16U4B.8FE 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Crucial Technology BL8G32C16U4B.8FE 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Crucial Technology BL8G32C16U4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

19.1 10.1

测试中的平均数值
更快的写入速度，GB/s

14.4 7.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology BL8G32C16U4B.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

10.1 19.1
写入速度，GB/s

7.1 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1484 3363

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3200C16-8GTRS 8GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Corsair CMV8GX4M1A2666C18 8GB

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Crucial Technology BL8G32C16U4B.8FE 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Qimonda 72T128420EFA3SB2 1GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905701-017.A00G 16GB

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Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMW32GX4M2C3466C16 16GB

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G Skill Intl F4-4000C19-4GVK 4GB

G Skill Intl F4-4000C19-4GVK 4GB