SK Hynix HMT425S6CFR6A-PB 2GB vs Samsung M378A1K43CB2-CRC 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更快的读取速度，GB/s

15.4 10.1

测试中的平均数值
更快的写入速度，GB/s

10.7 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

10.1 15.4
写入速度，GB/s

7.1 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Apacer Technology 78.D1GS7.B7B0B 16GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Nanya Technology NT4GC64B8HG0NS-DI 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB