SK Hynix HMT425S6CFR6A-PB 2GB vs Samsung M471A5143EB1-CRC 4GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 95

左右 57% 更低的延时

Samsung M471A5143EB1-CRC 4GB

需要考虑的原因
Samsung M471A5143EB1-CRC 4GB

报告一个错误

更快的读取速度，GB/s

15.8 10.1

测试中的平均数值
更快的写入速度，GB/s

7.3 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 95
读取速度，GB/s

10.1 15.8
写入速度，GB/s

7.1 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB