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SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
比较
SK Hynix HMT425S6CFR6A-PB 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
总分
SK Hynix HMT425S6CFR6A-PB 2GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
低于PassMark测试中的延时,ns
41
72
左右 43% 更低的延时
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
报告一个错误
更快的读取速度,GB/s
15.3
10.1
测试中的平均数值
更快的写入速度,GB/s
8.0
7.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
72
读取速度,GB/s
10.1
15.3
写入速度,GB/s
7.1
8.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1484
1817
SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较
Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 4ATF51264HZ-2G3E1 4GB
Kingston 99U5595-005.A00LF 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
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Corsair CM4B16G4J2400A16K2-O 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK64GX4M4C3000C16 16GB
Kingston 9965525-155.A00LF 8GB
Kingston HP32D4U8D8HC-16XR 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Corsair CMW32GX4M4A2666C16 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M2C3000C15 8GB
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Kingston 9905403-174.A00LF 2GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung M471A2K43EB1-CWE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Team Group Inc. DDR4 3000 4GB
报告一个错误
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Bug description
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