SK Hynix HMT42GR7AFR4A-PB 16GB vs Kingston 9905702-020.A00G 8GB

总分

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分

Kingston 9905702-020.A00G 8GB

Kingston 9905702-020.A00G 8GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 80

左右 48% 更低的延时
更快的写入速度，GB/s

8.0 7.4

测试中的平均数值

Kingston 9905702-020.A00G 8GB

需要考虑的原因
Kingston 9905702-020.A00G 8GB

报告一个错误

更快的读取速度，GB/s

14.3 11.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4A-PB 16GB

Kingston 9905702-020.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 80
读取速度，GB/s

11.7 14.3
写入速度，GB/s

8.0 7.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2535 1698

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4B3600C18 8GB

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Micron Technology 18ASF1G72PZ-2G1B1 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston HX318C10FK/4 4GB

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Corsair CMN32GX4M2Z3200C16 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Kingston KP223C-ELD 2GB

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Samsung M378B5673EH1-CH9 2GB

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Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB