RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT42GR7AFR4A-PB 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
比较
SK Hynix HMT42GR7AFR4A-PB 16GB vs Lexar Co Limited LD4AU016G-H2666G 16GB
总分
SK Hynix HMT42GR7AFR4A-PB 16GB
总分
Lexar Co Limited LD4AU016G-H2666G 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB
报告一个错误
需要考虑的原因
Lexar Co Limited LD4AU016G-H2666G 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
42
左右 -45% 更低的延时
更快的读取速度,GB/s
16.9
11.7
测试中的平均数值
更快的写入速度,GB/s
11.1
8.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT42GR7AFR4A-PB 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
29
读取速度,GB/s
11.7
16.9
写入速度,GB/s
8.0
11.1
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2535
3167
SK Hynix HMT42GR7AFR4A-PB 16GB RAM的比较
SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A2G40DB0-CPB 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston KH2400C15D4/8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-136.A00G 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C17-16GTZKW 16GB
AMD AE34G1601U1 4GB
Kingston 9905702-136.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A1G43EB1-CRC 8GB
Kingston ACR16D3LS1KNG/8G 8GB
G Skill Intl F4-3466C16-8GVK 8GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-16GVR 16GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F3-2133C9-4GAB 4GB
INTENSO 5641160 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
报告一个错误
×
Bug description
Source link