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SK Hynix HMT451S6AFR8A-PB 4GB
Kingston CBD24D4S7D8ME-16 16GB
比较
SK Hynix HMT451S6AFR8A-PB 4GB vs Kingston CBD24D4S7D8ME-16 16GB
总分
SK Hynix HMT451S6AFR8A-PB 4GB
总分
Kingston CBD24D4S7D8ME-16 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6AFR8A-PB 4GB
报告一个错误
需要考虑的原因
Kingston CBD24D4S7D8ME-16 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
44
左右 -91% 更低的延时
更快的读取速度,GB/s
15.7
12.3
测试中的平均数值
更快的写入速度,GB/s
8.1
7.9
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6AFR8A-PB 4GB
Kingston CBD24D4S7D8ME-16 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
23
读取速度,GB/s
12.3
15.7
写入速度,GB/s
7.9
8.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2022
2457
SK Hynix HMT451S6AFR8A-PB 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston CBD24D4S7D8ME-16 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4B16G4J2400A16K2-O 16GB
A-DATA Technology DOVF1B163G2G 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.CAGP7.40C0B 8GB
Samsung M471A5244CB0-CWE 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Kingston 99U5471-012.A00 4GB
MemxPro Inc. D4S8GHIOFFC 8GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
PNY Electronics PNY 2GB
Corsair CMW32GX4M4C3600C18 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W642GU42J9266N8 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M386A4G40DM1-CRC 32GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9965589-037.D00G 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
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Bug description
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