SK Hynix HMT451S6BFR8A-PB 4GB vs Corsair CMD32GX4M2A2800C16 16GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Corsair CMD32GX4M2A2800C16 16GB

Corsair CMD32GX4M2A2800C16 16GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Corsair CMD32GX4M2A2800C16 16GB

需要考虑的原因
Corsair CMD32GX4M2A2800C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

15.7 12.3

测试中的平均数值
更快的写入速度，GB/s

10.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMD32GX4M2A2800C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

12.3 15.7
写入速度，GB/s

7.8 10.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1977 3011

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905630-066.A00G 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F4-3600C14-8GTZN 8GB

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M471A2K43DB1-CTD 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.CAGP7.AZC0B 8GB

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Crucial Technology BL8G36C16U4W.M8FE1 8GB

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Samsung V-GeN D4S8GL32A8TL 8GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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Kingston 9905625-152.A00G 16GB

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Kingston 99U5471-030.A00LF 8GB

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA41GR7AFR4N-UH 8GB

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Samsung M393B1G70BH0-CK0 8GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB