SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 65

左右 32% 更低的延时

Crucial Technology BLS4G4D240FSE.8FE 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB

报告一个错误

更快的读取速度，GB/s

17.5 12.3

测试中的平均数值
更快的写入速度，GB/s

8.7 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 65
读取速度，GB/s

12.3 17.5
写入速度，GB/s

7.8 8.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1977 1921

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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EVGA 8GX-D4-3000-MR 8GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CMR64GX4M4C3466C16 16GB

Corsair CMR64GX4M4C3466C16 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Avant Technology J642GU42J5213N1 16GB

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Kingston KVR16N11/8-SP 8GB

Samsung M378A2K43EB1-CWE 16GB

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