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SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
44
左右 -91% 更低的延时
更快的读取速度,GB/s
18.2
12.3
测试中的平均数值
更快的写入速度,GB/s
15.1
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
23
读取速度,GB/s
12.3
18.2
写入速度,GB/s
7.8
15.1
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1977
3498
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
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Crucial Technology CT51264BD1339.M16F 4GB
Samsung M391A1G43DB0-CPB 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CM4X16GE2666Z16K4 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
报告一个错误
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Bug description
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