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SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX3466C19D4/8G 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Kingston KHX3466C19D4/8G 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Kingston KHX3466C19D4/8G 8GB 需要考虑的原因
Kingston KHX3466C19D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 44
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    27700 left arrow 12800
    左右 2.16 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX3466C19D4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 27
  • 读取速度，GB/s
    12.3 left arrow 18.5
  • 写入速度，GB/s
    7.8 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 27700
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    1977 left arrow 3539

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Kingston KHX3466C19D4/8G 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Samsung M378B5173EB0-CK0 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston ACR26D4S9S8ME-8 8GB
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Crucial Technology CT8G4SFS8266.M8FD 8GB
内存RAM