SK Hynix HMT451S6BFR8A-PB 4GB vs Samsung M471A1K43EB1-CWE 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 46

左右 4% 更低的延时

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16 12.3

测试中的平均数值
更快的写入速度，GB/s

12.4 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 46
读取速度，GB/s

12.3 16.0
写入速度，GB/s

7.8 12.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1977 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M8A2400C14 8GB

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Crucial Technology BL8G30C15U4W.M8FE1 8GB

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Kingston KHX1600C9D3/4G 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F4-3200C15-8GTZSW 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CMT32GX4M4C3600C18 8GB

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Samsung M471B5273DH0-CK0 4GB

Corsair CMT32GX4M2C3000C15 16GB

Corsair CMT32GX4M2C3000C15 16GB