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SK Hynix HMT451S6DFR8A-PB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分
star star star star star
SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异 规格 评论

差异

SK Hynix HMT451S6DFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6DFR8A-PB 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 29
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6DFR8A-PB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 22
  • 读取速度，GB/s
    11.3 left arrow 17.3
  • 写入速度，GB/s
    5.9 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1605 left arrow 3051

SK Hynix HMT451S6DFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Essencore Limited IM48GU88N26-GIIHMB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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