SK Hynix HMT451U6BFR8A-PB 4GB vs Kingston 9905665-023.A00G 4GB

总分

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

总分

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

差异规格评论

差异

SK Hynix HMT451U6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451U6BFR8A-PB 4GB

报告一个错误

更快的写入速度，GB/s

8.4 7.7

测试中的平均数值

Kingston 9905665-023.A00G 4GB

需要考虑的原因
Kingston 9905665-023.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

14.2 14

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451U6BFR8A-PB 4GB

Kingston 9905665-023.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

14.0 14.2
写入速度，GB/s

8.4 7.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2186 1813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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G Skill Intl F4-4400C19-32GVK 32GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Corsair CMR16GX4M2D3200C16 8GB

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Samsung M378B5673EH1-CF8 2GB

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AMD R538G1601U2S 8GB

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A-DATA Technology AO2P21FC8R2-BRGS 8GB

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A-DATA Technology DDR2 800G 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Samsung M378A1G43DB0-CPB 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

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Crucial Technology BL8G30C15U4B.M8FE1 8GB