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SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMU32GX4M2C3000C16 16GB

SK Hynix HYMP112S64CP6-S6 1GB vs Corsair CMU32GX4M2C3000C16 16GB

总分
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分
star star star star star
Corsair CMU32GX4M2C3000C16 16GB

Corsair CMU32GX4M2C3000C16 16GB

差异 规格 评论

差异

SK Hynix HYMP112S64CP6-S6 1GB 需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.4
    测试中的平均数值
Corsair CMU32GX4M2C3000C16 16GB 需要考虑的原因
Corsair CMU32GX4M2C3000C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 65
    左右 -195% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,711.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMU32GX4M2C3000C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 22
  • 读取速度，GB/s
    4,018.7 left arrow 18.4
  • 写入速度，GB/s
    1,711.1 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    513 left arrow 3265

SK Hynix HYMP112S64CP6-S6 1GB RAM的比较

Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Corsair CMU32GX4M2C3000C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Corsair CML8GX3M2A1866C9 4GB
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Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Essencore Limited KD4AGU880-36A180C 16GB
内存RAM
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Crucial Technology CT102464BF160B-16F 8GB
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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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内存RAM
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Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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内存RAM
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内存RAM
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Samsung M378B5173BH0-CH9 4GB
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Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM