SK Hynix HYMP112S64CP6-S6 1GB vs G Skill Intl F4-2400C16-8GRSB 8GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

G Skill Intl F4-2400C16-8GRSB 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更快的写入速度，GB/s

9.6 1,711.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-2400C16-8GRSB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

4,018.7 15.5
写入速度，GB/s

1,711.1 9.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

513 2442

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3000C15-4GTZ 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Kingston 9905403-447.A00LF 4GB

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G Skill Intl F4-3200C16-8GVK 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M393B5270CH0-CH9 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB