SK Hynix HYMP112S64CP6-S6 1GB vs Mushkin 99[2/7/4]204F 4GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的写入速度，GB/s

11.5 1,711.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,018.7 13.4
写入速度，GB/s

1,711.1 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

513 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5584-017.A00LF 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Mushkin 99[2/7/4]204F 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Samsung M391B5673EH1-CH9 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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AMD R9S48G3206U2S 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Asgard VMA45UG-MEC1U2AW1 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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