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Samsung M393B5170EH1-CH9 4GB
Mushkin 99[2/7/4]189F 4GB

Samsung M393B5170EH1-CH9 4GB vs Mushkin 99[2/7/4]189F 4GB

总分
star star star star star
Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分
star star star star star
Mushkin 99[2/7/4]189F 4GB

Mushkin 99[2/7/4]189F 4GB

差异 规格 评论

差异

Samsung M393B5170EH1-CH9 4GB 需要考虑的原因
Samsung M393B5170EH1-CH9 4GB
报告一个错误
Mushkin 99[2/7/4]189F 4GB 需要考虑的原因
Mushkin 99[2/7/4]189F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170EH1-CH9 4GB
Mushkin 99[2/7/4]189F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 26
  • 读取速度，GB/s
    10.2 left arrow 14.3
  • 写入速度，GB/s
    7.6 left arrow 11.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2049 left arrow 2912

Samsung M393B5170EH1-CH9 4GB RAM的比较

Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB

Mushkin 99[2/7/4]189F 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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