SK Hynix HYMP112S64CP6-S6 1GB vs Samsung M386A4K40BB0-CRC 32GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 11.8

测试中的平均数值

Samsung M386A4K40BB0-CRC 32GB

需要考虑的原因
Samsung M386A4K40BB0-CRC 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 65

左右 -117% 更低的延时
更快的写入速度，GB/s

5.9 1,711.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Samsung M386A4K40BB0-CRC 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 30
读取速度，GB/s

4,018.7 11.8
写入速度，GB/s

1,711.1 5.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

513 1984

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

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Hewlett-Packard 7EH64AA#ABC 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Teikon TMA41GU6AFR8N-TFSC 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CMD32GX4M2C3200C16 16GB

Corsair CMD32GX4M2C3200C16 16GB

Samsung M471B1G73QH0-YK0 8GB

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Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston 9905701-141.A00G 16GB

Kingston 9905701-141.A00G 16GB