SK Hynix HYMP112S64CP6-S6 1GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 14.8

测试中的平均数值

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 65

左右 -38% 更低的延时
更快的写入速度，GB/s

11.6 1,711.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 47
读取速度，GB/s

4,018.7 14.8
写入速度，GB/s

1,711.1 11.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

513 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2133C15-8GVR 8GB

G Skill Intl F4-2133C15-8GVR 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Kingston 9905734-003.A00G 32GB

Kingston 9905734-003.A00G 32GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Kingston 9905625-011.A00G 8GB

Kingston 9905625-011.A00G 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB