Samsung M378B5673EH1-CF8 2GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

A-DATA Technology DDR4 2666 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB

报告一个错误

更快的读取速度，GB/s

16.7 12.7

测试中的平均数值
更快的写入速度，GB/s

12.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

A-DATA Technology DDR4 2666 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.7 16.7
写入速度，GB/s

7.5 12.3
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3106

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C19-16GVK 16GB

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SK Hynix HMT325U6BFR8C-H9 2GB

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Team Group Inc. Team-Elite-2133 4GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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Kingston 99U5474-028.A00LF 4GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

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Kingston XCCT36-MIE 16GB

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Patriot Memory (PDP Systems) PSD48G266682 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Samsung M471B5273DH0-CH9 4GB

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Apacer Technology GD2.1831WS.001 16GB

Apacer Technology GD2.1831WS.001 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CM4B16G1J2400A16K2-O 16GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB