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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology DDR4 2666 2OZ 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
A-DATA Technology DDR4 2666 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更快的写入速度,GB/s
12.5
12.3
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
更快的读取速度,GB/s
16.7
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
16.7
写入速度,GB/s
12.5
12.3
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3106
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2666 2OZ 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M4K4333C19 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Asgard VMA41UG-MEC1U2AW1 8GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Essencore Limited KD48GS481-26N1600 8GB
Kingston 9905403-061.A00LF 2GB
Kingston 9905665-017.A00G 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMSX32GX4M2A3000C18 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905700-017.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3300C16-4GRRD 4GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMWX8GD3600C18W2D 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M1A2666C16 32GB
报告一个错误
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Bug description
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