SK Hynix HYMP112U64CP8-S5 1GB vs G Skill Intl F4-4000C17-16GTZRB 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的写入速度，GB/s

2,978.2 16.9

测试中的平均数值

G Skill Intl F4-4000C17-16GTZRB 16GB

需要考虑的原因
G Skill Intl F4-4000C17-16GTZRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 66

左右 -120% 更低的延时
更快的读取速度，GB/s

20.2 2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-4000C17-16GTZRB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 30
读取速度，GB/s

2,929.1 20.2
写入速度，GB/s

2,978.2 16.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 3844

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-CK0 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology BLE8G4D30AEEA.K16FE 8GB

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Corsair CMR32GX4M4C3000C15 8GB

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Dust Leopard DDR4-2400 CL17 8GB 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Samsung M386A8K40BM1-CRC 64GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB