SK Hynix HYMP112U64CP8-S5 1GB vs Golden Empire CL17-17-17 D4-2400 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值
更快的写入速度，GB/s

2,978.2 11.2

测试中的平均数值

Golden Empire CL17-17-17 D4-2400 16GB

需要考虑的原因
Golden Empire CL17-17-17 D4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 66

左右 -120% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Golden Empire CL17-17-17 D4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 30
读取速度，GB/s

2,929.1 16.5
写入速度，GB/s

2,978.2 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

511 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CML16GX3M2A1600C10 8GB

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Samsung M378A1K43CB2-CRC 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston HX316C10F/8 8GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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G Skill Intl F4-3600C19-8GSXW 8GB

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AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Samsung M471B5273EB0-CK0 4GB

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Crucial Technology BL8G32C16U4BL.8FE 8GB

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Kingston 9905316-106.A02LF 1GB

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Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

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