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Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3600C19-8GSXW 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3600C19-8GSXW 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXW 8GB

G Skill Intl F4-3600C19-8GSXW 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
G Skill Intl F4-3600C19-8GSXW 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 28
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3600C19-8GSXW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 18
  • 读取速度，GB/s
    12.9 left arrow 20.5
  • 写入速度，GB/s
    9.0 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3575

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

G Skill Intl F4-3600C19-8GSXW 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Corsair CMR32GX4M4C3000C16 8GB
Corsair CMR32GX4M4C3000C16 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
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SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
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Crucial Technology CT16G4SFD824A.C16FN 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
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Crucial Technology CT16G4DFD832A.C16FN 16GB
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内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
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Ramaxel Technology RMSA3270MB86H9F2400 4GB
内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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Corsair CM4X8GF2666Z16K4 8GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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内存RAM