SK Hynix HYMP112U64CP8-S5 1GB vs Kingston 9965600-027.A01G 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 10.8

测试中的平均数值

Kingston 9965600-027.A01G 16GB

需要考虑的原因
Kingston 9965600-027.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 66

左右 -94% 更低的延时
更快的写入速度，GB/s

8.5 2,978.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9965600-027.A01G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 34
读取速度，GB/s

2,929.1 10.8
写入速度，GB/s

2,978.2 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Micron Technology 36ASF4G72PZ-2G6H1 32GB

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G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB